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Advance Product Information September 27, 2004
10Gb/s Wide Dynamic Range Differential TIA
TGA4817-EPU
Key Features and Performance
* * * * * * * * 3200 Single-Ended Transimpedance > 9 GHz 3dB Bandwidth > 1.6mA RMS Input Overload Current 11pA/ Hz Input Noise Current Rx Signal Indicator (RSSI) 0.15m 3MI pHEMT Technology Bias Conditions: 3.3V, 70mA Chip dimensions: 1.20 x 1.20 x 0.10 mm (0.047 x 0.047 x 0.004 in)
Preliminary Measured Performance
79 76 Differential Zt (dB-Ohm) 73 70 67 64 61 58 55 52 1
Differential Transimpedance S22 Non-Inverting Output S22 Inverting Output
Bias Conditions: V+=3.3V I+=70mA
CPIN = 0.2 pF RPIN = 15 Ohm LBW = 1 nH
0 -3 -6 -9 -12 -15 -18 -21 -24 -27 Output Return Loss (dB)
Primary Applications
* OC-192/STM-64 Fiber Optic Systems
3
5
7 9 11 Frequency (GHz)
13
15
10.0Gb/s, 231-1 PRBS, IPD = 95 uA RMS
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 1
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information September 27, 2004 TGA4817-EPU
TABLE I MAXIMUM RATINGS Symbol V
+
Parameter 1/ Positive Supply Voltage Positive Supply Current (Quiescent) Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature
Value 5.5 V 80 mA 14.5 dBm 0.44 W 117 C 320 C -65 to 117 C
Notes 2/ 2/ 2/ 2/ 4/ 5/
I+ PIN PD TCH TM TSTG 1/ 2/ 3/ 4/ 5/
These ratings represent the maximum operable values for this device. Current is defined under no RF drive conditions. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. When operated at this power dissipation with a base plate temperature of 70 C, the median life is 1 E+6 hours. These ratings apply to each individual FET. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 2
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
TABLE II RF CHARACTERIZATION TABLE (TA = 25C, Nominal) + + (V = 3.3V, I = 70mA) 1/ Parameter Single-Ended Transimpedance (1GHz) 3dB Transimpedance Bandwidth Low Frequency 3dB Cut-Off Transimpedance Ripple (1 to 7GHz) Group Delay Variation (1 to 7GHz) Ave Eq. Noise Current (1 to 7GHz) Output Return Loss (0.1 to F3dB) Input Overload Current Sensitivity Single-Ended Limited Output Voltage 1/ 2/ 3/ 4/ 5/ 50 Single-Ended Output Impedance
Advance Product Information September 27, 2004 TGA4817-EPU
Typical 3200 9 < 40 1.5 15 11 12 1.6 10 600
Unit GHz kHz dBpp ps pA/Hz dB mA RMS uA RMS mVpp
Notes 2/ 3/ 2/ 3/ 4/ 2/ 3/ 2/ 3/ 3/ 2/ 3/ 5/ 5/
Photodiode& Bond Wire Model: CPD = 0.2pF, RPD = 15, LBW = 1.0 nH RF Output Interconnect Inductance: 0.42nH External Bypass Capacitors Required (see assembly drawing) 10GBit/s, 2 -1 PRBS, BER < 10
31 -12
TABLE III THERMAL INFORMATION Parameter RJC Thermal Resistance (channel to backside of carrier) Test Conditions V = 3.3 V + I = 70 mA Pdiss = 0.231 W
+
TCH (oC) 74
RJC (C/W) 17.3
TM (HRS) 1.1 E+8
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70C baseplate temperature.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 3
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information September 27, 2004 TGA4817-EPU Typical Fixtured Performance Optical Eye 10Gbps PRBS 231-1
Photodiode Current = 9.5 uA RMS
Photodiode Current = 1.5 mA RMS
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 4
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information September 27, 2004 TGA4817-EPU Typical Fixtured Performance
1.E-04 1.E-05 1.E-06 Bit Error Rate 1.E-07 1.E-08 1.E-09 1.E-10 1.E-11 1.E-12 1.E-13 1.E-14 0.001
1000 Output Voltage (mVpp)
0.010
0.100
1.000
10.000
Photodiode Current (mA RMS)
100
10 0.01
0.10 Photodiode Current (mA RMS)
1.00
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 5
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information September 27, 2004 TGA4817-EPU Typical Fixtured Performance
75 70 Single-Ended Zt (dB-Ohm) 65 60 55 50 45 40 35 30 1 3 5 7 9 11 13 Frequency (GHz) 15 17 19
+75C +50C +25C +0C -25C CPIN = 0.2 pF RPIN = 15 Ohm LBW = 1 nH
0 -2 -4 -6 -8 -10 -12 -14 -16 -18 - Output Return Loss (dB)
3.3 RSSI Output Voltage (V) 3.0 2.7 2.4 2.1 1.8 0.0 0.2 0.4 0.6 0.8 1.0 Photodiode Current (mA RMS)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 6
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information September 27, 2004 TGA4817-EPU Mechanical Drawing
0.128 (0.005) 0.277 (0.011) 0.382 (0.015)
1.200 (0.047) 1.115 (0.044) 0.972 (0.038)
2
3
4
5 0.600 (0.024) 1 6
0.750 (0.030)
0.450 (0.018)
0.085 (0.003) 0.000 (0.000) 0.000 (0.000) 0.085 (0.003) pad pad pad pad pad pad pad pad
8 0.267 (0.011)
7 1.115 (0.044) 1.200 (0.047) 0.377 (0.015)
Units: millimeters (inches) Thickness: 0.100 (0.004) Chip edge to bond pad dimensions are shown to center of bond pad Chip size tolerance: +/- 0.051 (0.002) GND IS BACKSIDE OF MMIC Bond Bond Bond Bond Bond Bond Bond Bond #1 #2 #3 #4 #5 #6 #7 #8 (RF In) (C Bypass) (V+) (FBIN) (+ RF Out) (- RF Out) (FBIN) (RSSI) 0.079 x 0.100 (0.003 x 0.004) 0.160 x 0.180 (0.006 x 0.007) 0.079 x 0.079 (0.003 x 0.003) 0.079 x 0.079 (0.003 x 0.003) 0.079 x 0.100 (0.003 x 0.004) 0.079 x 0.100 (0.003 x 0.004) 0.079 x 0.079 (0.003 x 0.003) ALTERNATE 0.079 x 0.079 (0.003 x 0.003)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 7
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information September 27, 2004 TGA4817-EPU Chip Assembly & Bonding Diagram
+3.3V C1 C2 +RF Out
Input Bond Wire L~ 1.5mm (1nH)
-RF Out
Output Bond Wires L~ 0.6mm (0.4nH)
RSSI
C1 - +3.3V Bypass Capacitor (>35nF) C2 - Sets Low Frequency Corner (>35nF) Recommended Components C1,C2 AVX: 0402YC393KAT2A C1,C2 Presidio: VL4040X7R363M16VH5
Alternate C2 Connection
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 8
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information September 27, 2004 TGA4817-EPU
Assembly Process Notes
Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C for 30 sec An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200 C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 9
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com

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